Open AccessИзготовление и исследование коммутирующих p-n-переходов для каскадных фотопреобразователей
Author(s) -
Р.В. Левин,
А.Е. Маричев,
Е.В. Контрош,
Н.Д. Прасолов,
В.С. Калиновский,
Б.В. Пушный
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.24.47026.17458
Subject(s) - ohmic contact , materials science , optoelectronics , current (fluid) , engineering physics , photovoltaic system , electrical engineering , nanotechnology , engineering , layer (electronics)
ome results of studies on the creation of new junction elements for application in monolithic multijunction InP based photovoltaic cells are presented. A new type of junction elements with a specific ohmic resistance of less than 2 mΩ cm^2 within a range of current densities of up to 700 A/cm^2 is presented as an alternative to tunnel junctions.