Open AccessОбразование кластеров спайков в CMOS-матрицах, облученных протонами и нейтронами
Author(s) -
Н. А. Иванов,
О.В. Лобанов,
В.В. Пашук,
М.О. Прыгунов,
К.Г. Сизова
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.21.46855.17457
Subject(s) - cmos , pixel , cluster (spacecraft) , irradiation , neutron , energy spectrum , physics , energy (signal processing) , optoelectronics , nuclear physics , optics , computer science , quantum mechanics , programming language
The distribution of pixels with high-value dark current in CMOS image sensors irradiated by protons with the energy of 1000 MeV and neutrons with a continuous spectrum simulating the energy spectrum of atmospheric neutrons is explored. Data on generation of spike clusters in the irradiated sensors and the exposure time influence on the cluster parameters are obtained.