Open AccessВлияние формы плавника и толщины скрытого оксидного слоя на DIBL-эффект в FinFET-транзисторе, изготовленном по технологии "кремний на изоляторе"
Author(s) -
А.Э. Абдикаримов,
А. Юсупов,
А.Э. Атамуратов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.21.46852.17328
Subject(s) - drain induced barrier lowering , materials science , fin , silicon on insulator , oxide , capacitance , barrier layer , transistor , silicon , rectangle , optoelectronics , mosfet , layer (electronics) , field effect transistor , condensed matter physics , electrical engineering , composite material , chemistry , geometry , voltage , engineering , physics , metallurgy , mathematics , electrode
In this paper, we simulated the dependence of the effect of reducing the drain-induced barrier lowering on the thickness of a buried oxide layer in a finned (vertical) metal-oxide-semiconductor field effect transistor (FinFET) based on silicon-on-insulator technology. Three shapes of the fin with the rectangle, trapezoid, and triangle cross sections were considered. The drain-induced barrier lowering effect significantly depends on both the fin shape and the thickness of the buried oxide layer. The smallest drain-induced barrier lowering effect occurs when the thickness of the buried oxide layer is small for the fin of a triangular shape. This behavior of the drain-induced barrier lowering effect is strongly correlated with the behavior of the parasitic capacitance between a gate and a source.