Open AccessКоррелированное изменение электрических характеристик тонкопленочного полевого транзистора при модификации физических свойств его оксидного полупроводникового канала (InZnO : N)
Author(s) -
А.Б. Черемисин,
Н.А. Кулдин
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.20.46811.17293
Subject(s) - thin film transistor , semiconductor , materials science , optoelectronics , transistor , capacitance , transmission (telecommunications) , voltage , threshold voltage , oxide , layer (electronics) , chemistry , electrical engineering , nanotechnology , electrode , engineering , metallurgy
We have studied changes in the transmission and current–voltage characteristics of a thin-film field-effect transistor (TFT) during modification of the physical properties of its oxide semiconductor channel based on InZnO:N layer. Modification of the electrical parameters of the device was based on the phenomenon of photoinduced charge accumulation in the semiconductor. It is established that the slopes and intercepts of the capacitance–voltage ( C _G– V _G) and transmission ( I _D– V _G) curves of the TFT under illumination exhibit correlated similar variations. The obtained results justify joint use of the C _G– V _G and I _D– V _G curves in the analysis of peculiarities of the energy band structure of oxide semiconductors.