Open AccessАсимметрия дефектной структуры полуполярного GaN, выращенного на Si(001)
Author(s) -
A. E. Kalmykov,
А.В. Мясоедов,
L. M. Sorokin
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.20.46806.17452
Subject(s) - epitaxy , materials science , transmission electron microscopy , gallium nitride , optoelectronics , layer (electronics) , asymmetry , substrate (aquarium) , hydride , vapor phase , nitride , crystallography , nanotechnology , chemistry , metallurgy , oceanography , physics , quantum mechanics , geology , metal , thermodynamics
The defect structure of a thick (~15 μm) semipolar gallium nitride (GaN) layer grown by hydride–chloride vapor phase epitaxy on a Si(001) substrate with buffer layers has been studied by transmission electron microscopy. The asymmetry of the defect structure of GaN epilayer has been revealed and analyzed. The influence of this asymmetry on the rate of decrease in the density of threading dislocations in the growing epitaxial layer is discussed.