Open AccessДостоверность выявления пронизывающих дислокаций в эпитаксиальных пленках с помощью структурно-чувствительного травления
Author(s) -
А.С. Дерябин,
Л.В. Соколов,
Е.М. Труханов,
К.Б. Фрицлер
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.20.46803.17322
Subject(s) - epitaxy , materials science , etching (microfabrication) , heterojunction , isotropic etching , optoelectronics , optical microscope , crystallography , analytical chemistry (journal) , nanotechnology , chemistry , composite material , scanning electron microscope , environmental chemistry , layer (electronics)
Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is established that the density of TDs revealed in epitaxial films with thicknesses h ≤ 1 μm can be significantly understated because of insufficient resolution of optical microscopy. Recommendations are given that increase the reliability of PD density estimation by means of structure-sensitive etching.