Open AccessОптические свойства InGaAs/InAlAs метаморфных наногетероструктур для фотопреобразователей лазерного и солнечного излучения
Author(s) -
В. М. Емельянов,
Н.А. Калюжный,
S. A. Mintairov,
М. Z. Shvarts
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.19.46682.17434
Subject(s) - gallium arsenide , indium arsenide , refractive index , materials science , distributed bragg reflector , indium gallium arsenide , wavelength , optoelectronics , heterojunction , arsenide , reflector (photography) , optics , dispersion (optics) , indium , physics , light source
Reflectance spectroscopy has been used to determine the refractive indices of nanoscale In_ x Al_ y Ga_1– x – y As and In_ x Al_1– x As layers with indium and aluminum concentrations x = 0.21–0.24 and y = 0, 0.1, and 0.2 on specially created Bragg-reflector heterostructures at wavelengths in the range 700–2000 nm. It was demonstrated that the method based on an analysis of the auto- and cross-correlation coefficients of the wavelength derivatives of the dependence of the reflectance of structures of this kind in order to determine the dispersion curves of the materials forming a reflector. It was found that raising the concentration of indium in InGaAs and AlInAs leads to a substantial rise in the refractive index, with a preserved spectral run of the refractive indices, which is characteristic of gallium arsenide and aluminum arsenide.