Эпитаксиальные структуры InGaAs/InAlAs/AlAs для гетеробарьерных варакторов с низким током утечки | Zendy

N. A. Maleev | Zendy; M. A. Bobrov | Zendy; A. G. Kuzmenkov | Zendy; А. П. Васильев | Zendy; M. M. Kulagina | Zendy; S. N. Maleev | Zendy; S. A. Blokhin | Zendy; В. Н. Неведомский | Zendy; V. M. Ustinov | Zendy

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Эпитаксиальные структуры InGaAs/InAlAs/AlAs для гетеробарьерных варакторов с низким током утечки

Author(s) -

N. A. Maleev,

M. A. Bobrov,

A. G. Kuzmenkov,

А. П. Васильев,

M. M. Kulagina,

S. N. Maleev,

S. A. Blokhin,

В. Н. Неведомский,

V. M. Ustinov

Publication year - 2018

Publication title -

письма в журнал технической физики

Language(s) - English

Resource type - Journals

eISSN - 1726-7471

pISSN - 0320-0116

DOI - 10.21883/pjtf.2018.19.46678.17413

Subject(s) - materials science , epitaxy , molecular beam epitaxy , optoelectronics , leakage (economics) , gallium arsenide , composite material , layer (electronics) , economics , macroeconomics

The quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm^2 at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).

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