Open AccessЭпитаксиальные структуры InGaAs/InAlAs/AlAs для гетеробарьерных варакторов с низким током утечки
Author(s) -
N. A. Maleev,
M. A. Bobrov,
A. G. Kuzmenkov,
А. П. Васильев,
M. M. Kulagina,
S. N. Maleev,
S. A. Blokhin,
V. N. Nevedomskiy,
V. M. Ustinov
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.19.46678.17413
Subject(s) - materials science , epitaxy , molecular beam epitaxy , optoelectronics , leakage (economics) , gallium arsenide , composite material , layer (electronics) , economics , macroeconomics
AbstractThe quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm^2 at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).