Open AccessДефектная структура слоев GaAs, имплантированных ионами азота
Author(s) -
Н.А. Соболев,
А.Е. Калядин,
К.В. Карабешкин,
Р.Н. Кютт,
В.М. Микушкин,
Е.И. Шек,
Е.В. Шерстнев,
В.И. Вдовин
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.18.46608.17148
Subject(s) - transmission electron microscopy , materials science , ion implantation , epitaxy , layer (electronics) , crystallographic defect , ion , crystallography , diffraction , analytical chemistry (journal) , chemistry , nanotechnology , optics , physics , organic chemistry , chromatography
tructural defects formed in epitaxial GaAs layers as a result of 250-keV N^+ ion implantation to doses within 5 × 10^14–5 × 10^16 cm^–2 have been studied by the X-ray diffraction (XRD) and transmission electron microscopy techniques. No amorphization of the ion-implanted layer took place in the entire dose range studied. The implantation to doses of 5 × 10^14 and 5 × 10^15 cm^–2 led to the appearance of an additional peak on XRD curves, which was related to the formation of a stressed GaAs layer with positive deformation arising due to the formation of point-defect clusters. The implantation to a dose of 5 × 10^16 cm^–2 led to the formation of a dense structure of extended defects in the implanted layer, which was accompanied by the relaxation of macrostresses to the initial state.