Open AccessКвантовые каскадные лазеры с длиной волны излучения 4.8 mum, работающие при комнатной температуре
Author(s) -
В.В. Мамутин,
А.П. Васильев,
А.В. Лютецкий,
Н.Д. Ильинская,
А.А. Усикова,
Ю.М. Задиранов,
Н.А. Малеев,
А.Н. Софронов,
Д.А. Фирсов,
Л.Е. Воробьев,
В.М. Устинов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.18.46607.17383
Subject(s) - materials science , optoelectronics , molecular beam epitaxy , indium phosphide , wavelength , laser , heterojunction , cascade , doping , substrate (aquarium) , epitaxy , optics , quantum cascade laser , lasing threshold , layer (electronics) , gallium arsenide , nanotechnology , chemistry , physics , oceanography , chromatography , terahertz radiation , geology
AbstractWe report on room-temperature generation at the 4.8-μm wavelength in a lattice-matched structure of a quantum cascade laser (QCL) grown on indium phosphide (InP) substrate. Laser heterostructures grown by molecular beam epitaxy (MBE) comprised 30 cascades and were designed to generate at the 4.80 μm wavelength corresponding to an atmospheric transparency window. Experiments demonstrated effective lasing at temperatures from 80 to 300 K on a wavelength coinciding with the calculated value, which confirmed the high quality of interfaces, high precision of layer thicknesses, and high accuracy of active region doping.