Open AccessМетод диффузии цинка в InP через узкий зазор с использованием планарного источника на основе Zn-=SUB=-3-=/SUB=-P-=SUB=-2-=/SUB=-
Author(s) -
М. О. Петрушков,
М.А. Путято,
I. B. Chistokhin,
Б.Р. Семягин,
Е.А. Емельянов,
Maxim Esin,
Т. А. Гаврилова,
A. V. Vasev,
В. В. Преображенский
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.14.46340.17146
Subject(s) - doping , zinc , diffusion , materials science , scanning electron microscope , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , physics , composite material , chromatography , thermodynamics
An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of p–n junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.