Open AccessВлияние дозы имплантации ионов азота на концентрацию точечных дефектов, введенных в слои GaAs
Author(s) -
Н.А. Соболев,
Б.Я. Бер,
Д.Ю. Казанцев,
А.Е. Калядин,
К.В. Карабешкин,
В.М. Микушкин,
В.И. Сахаров,
И.Т. Серенков,
Е.И. Шек,
Е.В. Шерстнев,
Н.М. Шмидт
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.13.46326.17139
Subject(s) - ion , materials science , epitaxy , proton , layer (electronics) , analytical chemistry (journal) , crystallographic defect , rutherford backscattering spectrometry , nitrogen , mass spectrometry , chemistry , crystallography , nuclear physics , nanotechnology , physics , organic chemistry , chromatography
econdary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N^+ ions at doses of 5 × 10^14–5 × 10^16 cm^–2. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.