Open AccessРентгеноструктурный анализ эпитаксиальных слоев со свойствами дислокационного фильтра
Author(s) -
И.Д. Лошкарев,
А.П. Василенко,
Е.М. Труханов,
А.В. Колесников,
М.О. Петрушков,
М.А. Путято
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.13.46323.17160
Subject(s) - dislocation , materials science , epitaxy , reciprocal lattice , crystallography , threading (protein sequence) , condensed matter physics , optics , optoelectronics , physics , chemistry , nanotechnology , diffraction , composite material , nuclear magnetic resonance , layer (electronics) , protein structure
An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.