Open AccessФорма распределения интенсивности рентгеновской дифракции в обратном пространстве и ее связь с дислокационной структурой эпитаксиальных слоев
Author(s) -
Р.Н. Кютт,
М.П. Щеглов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.12.46297.17100
Subject(s) - perpendicular , reciprocal lattice , materials science , crystallography , condensed matter physics , lattice (music) , diffraction , limiting , optics , sapphire , crystal (programming language) , bent molecular geometry , bragg's law , epitaxy , geometry , physics , mathematics , chemistry , laser , nanotechnology , computer science , mechanical engineering , layer (electronics) , acoustics , composite material , programming language , engineering
X-ray diffraction (XRD) in asymmetric Bragg geometry was measured and XRD intensity distribution maps in the reciprocal space were constructed for GaN epitaxial layers with various degrees of structural perfection grown on c -sapphire substrates. It is established that equal-intensity lines (isolines) related to a regular system of perpendicular rectilinear threading dislocations are extended in a direction parallel to the surface. For a more chaotic distribution of dislocations with a large fraction of horizontal fragments, these isolines are rotated toward a direction perpendicular to the reciprocal lattice vector, although they still not attain a limiting position characteristic of the ideal mosaic crystal.