Open AccessБлижний порядок, транспорт заряда в SiO-=SUB=-x-=/SUB=-: эксперимент и численное моделирование
Author(s) -
В.A. Гриценко,
Ю.Н. Новиков,
Akihiro Shin
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.12.46295.17273
Subject(s) - x ray photoelectron spectroscopy , percolation (cognitive psychology) , materials science , conductivity , spectroscopy , analytical chemistry (journal) , electron , electrical resistivity and conductivity , nanoscopic scale , condensed matter physics , range (aeronautics) , silicon , percolation theory , oxide , percolation threshold , chemistry , nanotechnology , nuclear magnetic resonance , physics , optoelectronics , quantum mechanics , chromatography , neuroscience , metallurgy , composite material , biology
The structure of nonstoichiometric silicon oxide (SiO_ x ) has been studied by the methods of highresolution X-ray photoelectron spectroscopy and fundamental optical-absorption spectroscopy. The conductivity of SiO_ x ( x = 1.4 and 1.6) films has been measured in a wide range of electric fields and temperatures. Experimental data are described in terms of the proposed SiO_ x structure model based on the concept of fluctuating chemical composition leading to nanoscale fluctuations in the electric potential. The maximum amplitude of potential fluctuations amounts to 2.6 eV for electrons and 3.8 eV for holes. In the framework of this model, the observed conductivity of SiO_ x is described by the Shklovskii–Efros theory of percolation in inhomogeneous media. The characteristic spatial scale of potential fluctuations in SiO_ x films is about 3 nm. The electron-percolation energy in SiO_1.4 and SiO_1.6 films is estimated to be 0.5 and 0.8 eV, respectively.