Open AccessТранспорт носителей заряда и перезарядка глубоких уровней в структурах для лавинных S-диодов на основе GaAs
Author(s) -
I. А. Prudaev,
Maksim G. Verkholetov,
А.Д. Королёва,
О. П. Толбанов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.11.46193.17254
Subject(s) - gallium arsenide , diode , avalanche breakdown , semiconductor device , materials science , avalanche diode , optoelectronics , diffusion , single photon avalanche diode , poisson distribution , breakdown voltage , computational physics , voltage , physics , electrical engineering , optics , nanotechnology , avalanche photodiode , engineering , mathematics , statistics , layer (electronics) , detector , thermodynamics
Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n ^+–π–ν– n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S -shaped I–V characteristic of the diffusion avalanche S -diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels.