Open AccessЛокальные колебания связей кремний-кремний в нитриде кремния
Author(s) -
В.А. Володин,
В.А. Гриценко,
Albert Chin
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.10.46097.17223
Subject(s) - stoichiometry , silicon , materials science , silicon nitride , amorphous solid , nitride , amorphous silicon , crystallography , nanotechnology , chemistry , crystalline silicon , optoelectronics , layer (electronics)
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si_3N_4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si_3N_4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si_3N_4.