Open AccessПрецизионный алгоритм переключения мемристора в состояние с заданным сопротивлением
Author(s) -
К.Э. Никируй,
А.В. Емельянов,
В.А. Демин,
В.В. Рыльков,
А.В. Ситников,
П.К. Кашкаров
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.10.46095.17099
Subject(s) - memristor , neuromorphic engineering , amplitude , voltage , duration (music) , computer science , algorithm , state (computer science) , electronic engineering , control theory (sociology) , electrical engineering , engineering , artificial intelligence , physics , acoustics , artificial neural network , optics , control (management)
An algorithm of memristor switching with high precision to a state with preset resistance has been developed based on the application of voltage pulses with smoothly increasing amplitude and the duration varying randomly within preset limits. It is shown that the proposed algorithm can be implemented in memristor structures based on (Co_40Fe_40B_20)_ x (LiNbO_3)_100– x nanocomposites with x ≈ 10 at. %. Optimum parameters are selected for the algorithm operation with a minimum number of iterations that allows the accuracy of resistance setting to be no worse than 0.5%. The obtained results can be used in the creation of neuromorphic systems.