Open AccessВозрастание мощности колебаний тока в полупроводниковой сверхрешетке с учетом межминизонного туннелирования
Author(s) -
А.О. Сельский
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.09.46065.17062
Subject(s) - superlattice , oscillation (cell signaling) , semiconductor , current (fluid) , quantum tunnelling , condensed matter physics , physics , voltage , band gap , power (physics) , optoelectronics , materials science , chemistry , quantum mechanics , thermodynamics , biochemistry
The total power of oscillations of current flowing through a semiconductor superlattice with different gaps between the first and second minibands is discussed. It is demonstrated that, with a decrease in the band gap, i.e., with an increase in the probability of interminiband tunneling, the total current-oscillation power increases when certain voltages are applied to the superlattice.