Open AccessПлазменное отражение в мультизеренном слое узкозонных полупроводников
Author(s) -
Н.Д. Жуков,
М.И. Шишкин,
А.Г. Роках
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.08.45973.17010
Subject(s) - absorption edge , semiconductor , quantum dot , electron , excitation , materials science , absorption (acoustics) , band gap , diamond , coulomb , spectral line , absorption spectroscopy , resonance (particle physics) , reflection (computer programming) , atomic physics , condensed matter physics , molecular physics , chemistry , optoelectronics , optics , physics , quantum mechanics , astronomy , composite material , programming language , computer science
Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.