Open AccessСоздание пористых слоев германия имплантацией ионами серебра
Author(s) -
А.Л. Степанов,
В.В. Воробьев,
В.И. Нуждин,
В.Ф. Валеев,
Ю. Н. Осин
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.08.45971.16808
Subject(s) - germanium , materials science , scanning electron microscope , reflection high energy electron diffraction , electron diffraction , ion , analytical chemistry (journal) , microanalysis , ion implantation , layer (electronics) , crystallography , diffraction , nanotechnology , silicon , chemistry , optoelectronics , optics , epitaxy , composite material , physics , organic chemistry , chromatography
We propose a method for the formation of porous germanium ( P -Ge) layers containing silver nanoparticles by means of high-dose implantation of low-energy Ag^+ ions into single-crystalline germanium ( c -Ge). This is demonstrated by implantation of 30-keV Ag^+ ions into a polished c -Ge plate to a dose of 1.5 × 10^17 ion/cm^2 at an ion beam-current density of 5 μA/cm^2. Examination by high-resolution scanning electron microscopy (SEM), atomic-force microscopy (AFM), X-ray diffraction (XRD), energy-dispersive X-ray (EDX) microanalysis, and reflection high-energy electron diffraction (RHEED) showed that the implantation of silver ions into c -Ge surface led to the formation of a P -Ge layer with spongy structure comprising a network of interwoven nanofibers with an average diameter of ∼10–20 nm Ag nanoparticles on the ends of fibers. It is also established that the formation of pores during Ag^+ ion implantation is accompanied by effective sputtering of the Ge surface.