Open AccessФотовольтаические характеристики светодиодов на основе AlGaAs
Author(s) -
А. А. Sokolovskii
Publication year - 2018
Publication title -
письма в журнал технической физики
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.08.45967.17154
Subject(s) - monochromatic color , optoelectronics , materials science , diode , semiconductor , converters , photovoltaic system , wavelength , radiation , light emitting diode , gallium arsenide , optics , electrical engineering , physics , engineering , voltage
Photovoltaic characteristics of more than 20 types of AlGaAs-based light-emitting diodes operating in the 830- to 970-nm wavelength range have been considered. It is established that Al_ x Ga_1 – x As semiconductor structures employed in these devices can also be used for manufacturing photovoltaic converters of monochromatic radiation with quite high efficiency.
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