Open AccessГенерация носителей заряда в пленках кремний--германий, сильно легированных титаном, при их однородном нагреве
Author(s) -
Ш.К. Кучканов,
Х. Б. Ашуров
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.08.45965.17157
Subject(s) - electromotive force , chemical vapor deposition , materials science , silicon , analytical chemistry (journal) , optoelectronics , chemistry , electrical engineering , chromatography , engineering
We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated n -type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on p -type silicon substrates. A maximum emf value of ∼3 mV was observed at temperatures within 500–600 K for dark short-circuit currents ∼0.5–1 μA, the value of which increased with the temperature to reach ∼3 μA at 800 K.