Open AccessНовое ограничение разрешения по глубине при послойном элементном анализе методом времяпролетной вторично-ионной масс-спектрометрии: влияние зондирующего ионного пучка
Author(s) -
М.Н. Дроздов,
Ю Н Дроздов,
А.В. Новиков,
П.А. Юнин,
Д.В. Юрасов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.08.45961.17020
Subject(s) - sputtering , ion , bismuth , profiling (computer programming) , secondary ion mass spectrometry , ion beam , resolution (logic) , materials science , mass spectrometry , analytical chemistry (journal) , chemistry , computer science , nanotechnology , thin film , metallurgy , artificial intelligence , environmental chemistry , organic chemistry , chromatography , operating system
New data concerning the influence of a probing beam of bismuth ions on the depth resolution in elemental depth profiling by secondary ion mass spectrometry (SIMS) have been obtained on a TOF.SIMS-5 system using the principle of two separate ion beams. It is established that the existing criterion of nondestructive character of the probing beam, on which this principle is based, is insufficient. Additional processes must be taken into account so as to formulate a more adequate criterion. A regime of depth profiling is proposed that allows the depth resolution to be improved at low energies of sputtering ions.