Open AccessДозовая зависимость формирования нанокристаллов в имплантированных гелием слоях кремния
Author(s) -
А.А. Ломов,
А.В. Мяконьких,
Ю.М. Чесноков,
В.В. Денисов,
А.Н. Кириченко,
В.Н. Денисов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.07.45883.17112
Subject(s) - materials science , nanocrystal , transmission electron microscopy , annealing (glass) , ion implantation , silicon , microstructure , raman scattering , reflectometry , raman spectroscopy , ion , analytical chemistry (journal) , nanotechnology , optoelectronics , chemistry , optics , composite material , computer science , time domain , physics , organic chemistry , chromatography , computer vision
The possibility of nanocrystal formation in silicon layers subjected to plasma-immersion helium-ion implantation at an energy of 5 keV has been proved for the first time. The effect of the implantation dose on the microstructure of the layers has been studied by X-ray reflectometry, transmission electron microscopy and Raman scattering. It has been established that the formation of silicon nanocrystals with dimensions of 10–20 nm is accompanied by a pronounced dependence on the ion flux and occurs at a dose of 5 × 10^17 cm^–2 with subsequent annealing at 700–800°C. The excessive dose has been shown to cause the destruction of the upper protective sublayer and the degradation of the optical properties of nanocrystals.