Open AccessЭлектронная структура наноинтерфейса Cs/n-GaN(0001)
Author(s) -
Г.В. Бенеманская,
М.Н. Лапушкин,
D. Marchenko,
S. N. Timoshnev
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.06.45767.16885
Subject(s) - x ray photoelectron spectroscopy , materials science , excitation , atomic physics , spectral line , synchrotron , photoemission spectroscopy , valence (chemistry) , surface states , analytical chemistry (journal) , valence band , metal , chemistry , band gap , surface (topology) , nuclear magnetic resonance , optoelectronics , physics , optics , geometry , mathematics , organic chemistry , quantum mechanics , astronomy , chromatography , metallurgy
Electronic structures of the n -GaN(0001) surface and Cs/ n -GaN(0001) interface with submonolayer Cs coverages were studied for the first time in situ by the photoelectron spectroscopy (PES) method. The spectra of photoemission from the valence band, surface electron states, and core levels (Ga 3 d , Cs 4 d , Cs 5 p ) under synchrotron excitation were measured in a range of photon energies within 50–150 eV. Evolution of the spectrum of surface states near the valence-band maximum was revealed by PES during the adsorption of Cs atoms. A metallic character of the Cs/ n -GaN(0001) nano-interface is demonstrated.