Open AccessЭкспериментальное наблюдение задержанного ударно-ионизационного пробоя полупроводниковых структур без p-n-переходов
Author(s) -
В.И. Брылевский,
И.А. Смирнова,
Н.И. Подольская,
Ю.А. Жарова,
П.Б. Родин,
И.В. Грехов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.04.45640.17086
Subject(s) - ohmic contact , avalanche breakdown , impact ionization , avalanche diode , diode , materials science , silicon , ionization , planar , optoelectronics , breakdown voltage , single photon avalanche diode , semiconductor , zener diode , voltage , atomic physics , avalanche photodiode , physics , optics , nanotechnology , transistor , detector , ion , computer science , computer graphics (images) , layer (electronics) , quantum mechanics
We have experimentally studied the dynamics of impact-ionization switching in semiconductor structures without p – n junctions when subnanosecond high-voltage pulses are applied. Silicon n ^+– n – n ^+ type structures and volume ZnSe samples with planar ohmic contacts exhibit reversible avalanche switching to the conducting state within about 200 ps, which resembles the well-known phenomenon of delayed avalanche breakdown in reverse-biased p ^+– n – n ^+ diode structures. Experimental data are compared to the results of numerical simulations.