Open AccessКогерентный рост нитевидных нанокристаллов InP/InAsP/InP на поверхности Si(111) при молекулярно-пучковой эпитаксии
Author(s) -
R. R. Reznik,
Г. Э. Цырлин,
I. V. Shtrom,
А. И. Хребтов,
I. P. Soshnikov,
Н.В. Крыжановская,
E. I. Moiseev,
A. E. Zhukov
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.03.45579.16991
Subject(s) - nanowire , substrate (aquarium) , materials science , optoelectronics , wavelength , intensity (physics) , nanostructure , indium phosphide , nanotechnology , optics , gallium arsenide , physics , oceanography , geology
Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.