Open AccessВысоковольтные (1600 V) размыкатели тока с субнаносекундным (150 ps) быстродействием на основе 4H-SiC
Author(s) -
П. А. Иванов,
O. I. Kon’kov,
T. P. Samsonova,
А. С. Потапов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.03.45572.17025
Subject(s) - silicon carbide , diode , materials science , circuit breaker , optoelectronics , epitaxy , voltage , current (fluid) , electrical engineering , carbide , breakdown voltage , composite material , engineering , layer (electronics)
High-voltage (1600 V) diodes based on epitaxial 4 H -SiC p ^++– p ^+– n _0– n ^+ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4 H -SiC of p type is experimentally estimated for the first time: v _ sp = 3 × 10^6 cm/s.