Open AccessГексагональные слои AlN, выращенные на сульфидированной Si(100)-подложке
Author(s) -
В. Н. Бессолов,
Е. В. Гущина,
E. V. Konenkova,
T. V. L’vova,
V. N. Panteleev,
M. P. Shcheglov
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.02.45470.17006
Subject(s) - epitaxy , nucleation , materials science , passivation , substrate (aquarium) , nitride , sulfide , layer (electronics) , silicon , oxide , chemical engineering , silicon nitride , phase (matter) , crystallography , mineralogy , nanotechnology , optoelectronics , chemistry , metallurgy , organic chemistry , oceanography , geology , engineering
We have studied the influence of sulfide passivation on the initial stages of aluminum nitride (AlN)-layer nucleation and growth by hydride vapor-phase epitaxy (HVPE) on (100)-oriented single-crystalline silicon substrates. It is established that the substrate pretreatment in (NH_4)_2S aqueous solution leads to the columnar nucleation of hexagonal AlN crystals of two modifications rotated by 30° relative to each other. Based on the sulfide treatment, a simple method of oxide removal from and preparation of Si(100) substrate surface is developed that can be used for the epitaxial growth of group-III nitride layers.