Open AccessВлияние конструкции резонатора на ширину линии одномодовых вертикально-излучающих лазеров ближнего ИК-диапазона
Author(s) -
С.А. Блохин,
М.А. Бобров,
А.Г. Кузьменков,
А.А. Блохин,
А.П. Васильев,
Ю.А. Гусева,
М.М. Кулагина,
Ю.М. Задиранов,
Н.А. Малеев,
И.И. Новиков,
Л.Я. Карачинский,
N. N. Ledentsov,
В.М. Устинов
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.01.45432.17029
Subject(s) - laser linewidth , materials science , optoelectronics , optics , laser , quantum well , semiconductor laser theory , distributed bragg reflector , semiconductor , physics
The studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For low mirror loss, lasers with a 1λ cavity and carrier injection through distributed Bragg reflectors demonstrate a linewidth of 70 MHz and its growth to 110 MHz with increasing mirror loss (corresponding differential of efficiency ∼0.65 W/A). The design of the optical cavity with carrier injection through intracavity contacts and low-Q composition Bragg lattices reduces the linewidth to 40 MHz in spite of high mirror loss (corresponding differential efficiency of ∼0.6 W/A).