Open AccessВертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания
Author(s) -
А.В. Бабичев,
Л.Я. Карачинский,
И.И. Новиков,
А.Г. Гладышев,
С.А. Блохин,
S. Mikhailov,
V. Iakovlev,
A. Sirbu,
G. Stepniak,
L. Chorchos,
J.P. Turkiewicz,
К.O. Воропаев,
А.С. Ионов,
M. Agustin,
N.N. Ledentsov,
А.Ю. Егоров
Publication year - 2018
Publication title -
pisʹma v žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-7471
pISSN - 0320-0116
DOI - 10.21883/pjtf.2018.01.45431.16993
Subject(s) - lasing threshold , optoelectronics , materials science , laser , distributed bragg reflector , wafer , distributed bragg reflector laser , optics , molecular beam epitaxy , quantum well , slope efficiency , aperture (computer memory) , semiconductor laser theory , fabrication , reflector (photography) , epitaxy , semiconductor , fiber laser , physics , wavelength , nanotechnology , medicine , light source , alternative medicine , layer (electronics) , pathology , acoustics
The results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.