Open AccessОптические свойства тонких пленок SiO-=SUB=-x-=/SUB=- (x<2), полученных обработкой термического диоксида кремния в водородной плазме
Author(s) -
В. Н. Кручинин,
Т. В. Перевалов,
В. Ш. Алиев,
Р. М. Х. Исхакзай,
Е. В. Спесивцев,
В.А. Гриценко,
В. А. Пустоваров
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.10.50016.12-20
Subject(s) - ellipsometry , refractive index , hydrogen , analytical chemistry (journal) , stoichiometry , plasma , silicon , thin film , oxygen , electron cyclotron resonance , oxide , materials science , silicon oxide , thermal oxidation , spectroscopy , chemistry , nanotechnology , optoelectronics , physics , organic chemistry , chromatography , quantum mechanics , silicon nitride , metallurgy
Using the methods of ellipsometry, quantum chemical modeling, and photoluminescent spectroscopy, the optical properties and composition of thin films of thermal silicon oxide processed in a hydrogen electron-cyclotron resonance plasma are studied. It has been established that treatment of films in plasma leads to their depletion in oxygen and the formation of non-stoichiometric oxide SiOx <2. By comparing the experimental spectral dependence of the refractive index with the theoretically calculated from the first principles, the values of the parameter x in the obtained SiOx films are determined. It was shown that an increase in the processing time of thermal SiO2 in hydrogen plasma leads to an increase in the refractive index of the film, as well as the degree of depletion of the film with oxygen. For the studied films, the dependence of the value of the parameter x on the treatment time in a hydrogen plasma is constructed.