Open AccessThe Influence of the Schottky Barrier at the Metal/PbS NCs Junction on the Charge Transport Properties-=SUP=-*-=/SUP=-
Author(s) -
D. A. Onishchuk,
Petеr S. Parfenov,
Aliaksei Dubavik,
Aleksandr P. Litvin
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.08.49725.1002-20
Subject(s) - schottky barrier , schottky diode , metal–semiconductor junction , quantum tunnelling , materials science , electrode , optoelectronics , metal , semiconductor , oxide , layer (electronics) , schottky effect , nanocrystal , nanotechnology , chemistry , metallurgy , diode
The effect of the Schottky barrier height changes on the metal/EDT-treated (1,2-ethanedithiol) PbS nanocrystals film interface is considered. Also, the influence of shunts on the J-V characteristic and the Schottky barrier height is demonstrated, as well, the effect of silver oxide layer on the charge accumulation and tunneling. It is shown that the gold electrodes provide more stable results even when the Schottky barrier is formed, while the silver electrode provides more current. Keywords: semiconductor nanocrystals, Schottky barrier, charge carriers transport, thin films.