Open AccessТерагерцовое излучение фотопроводящих антенн на основе сверхрешеточных структур \LT-GaAs/GaAs:Si\
Author(s) -
А. Н. Клочков,
Е. А. Климов,
П.М. Солянкин,
Maria Konnikova,
И. С. Васильевский,
А. Н. Виниченко,
Alexander P. Shkurinov,
Г. Б. Галиев
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.07.49574.17-20
Subject(s) - terahertz radiation , materials science , photoconductivity , optoelectronics , gallium arsenide , antenna (radio) , voltage , saturation (graph theory) , optics , electrical engineering , physics , mathematics , combinatorics , engineering
A multilayer structure based on low-temperature LT-GaAs with crystallographic orientation (111) A is proposed for the fabrication of terahertz (THz) photoconductive antennas. The structures contain active layers of undoped LT-GaAs and high-temperature GaAs:Si layers doped with Si acceptors. At an optical pump power of 19 mW and a bias voltage of 30 V, a photoconductive antenna on an optimized {LT-GaAs / GaAs: Si} (111) A structure emitted THz pulses with an average power of 2.3 μW at a pulse repetition rate of 80 MHz, the conversion efficiency was 1.2 ∙ 10-4. It is shown that the dependence of the integrated power of THz antenna pulses based on {LT-GaAs / GaAs: Si} (111) A structures on the applied voltage is superlinear, and on the optical pump power it has the form of a saturation curve. The possibility of practical application of the obtained antennas for the tasks of terahertz spectroscopy of biological solutions is shown.