Open AccessВлияние дефектов на поглощение терагерцового излучения в монокристалле CdSiP-=SUB=-2-=/SUB=-
Author(s) -
V. S. Nozdrin,
S. V. Chuchupal,
G. A. Komandin,
В. Н. Курлов,
O. E. Porodinkov,
I. E. Spektor,
Gleb M. Katyba,
Peter G. Schunemann,
K. T. Zawilski
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.07.49573.27-20
Subject(s) - absorption (acoustics) , chalcopyrite , materials science , reflection (computer programming) , terahertz radiation , crystal (programming language) , absorption spectroscopy , infrared spectroscopy , single crystal , infrared , optics , analytical chemistry (journal) , spectroscopy , range (aeronautics) , atmospheric temperature range , fourier transform infrared spectroscopy , fourier transform , optoelectronics , chemistry , crystallography , copper , physics , organic chemistry , chromatography , quantum mechanics , meteorology , computer science , metallurgy , composite material , programming language
Measurements of the transmission and reflection spectra of a CdSiP2 single crystal, performed in the temperature range from 80 to 300 K using pulsed terahertz and infrared Fourier spectroscopy, revealed a significant impact of post-growth defects on absorption in the THz range. It was found that this absorption is weakly dependent on temperature, in contrast to the previously obtained results for another crystal of the chalcopyrite family with s significantly lower concentration of defects. When cooling, the intrinsic absorption mechanisms were minimized and the contribution of defects to absorption was extracted