Open AccessИсследование морфологии поверхности, электрофизических характеристик и спектров фотолюминесценции эпитаксиальных плёнок GaAs на подложках GaAs (110)
Author(s) -
Г. Б. Галиев,
Е. А. Климов,
A. A. Zaitsev,
С. С. Пушкарев,
А. Н. Клочков
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.07.49556.18-20
Subject(s) - epitaxy , photoluminescence , molecular beam epitaxy , arsenic , materials science , gallium , silicon , doping , atom (system on chip) , crystallographic defect , gallium arsenide , optoelectronics , analytical chemistry (journal) , crystallography , nanotechnology , chemistry , metallurgy , layer (electronics) , chromatography , computer science , embedded system
The electrophysical and photoluminescent characteristics as well as the surface morphology of GaAs epitaxial films grown by molecular beam epitaxy on GaAs (110) substrates are studied. Silicon-doped epitaxial layers were grown in a wide range of growth temperatures from 410 to 680 °C and a ratio of arsenic and gallium fluxes from 14 to 84. The ranges of growth conditions resulting in the smoothest epitaxial films surface were estimated by atomic force microscopy. The occurrence of point defects "a Si atom in a Ga site" and "a Si atom in a As site" as well as the formation of arsenic and gallium vacancies were interpreted by analyzing the photoluminescence spectra of the grown samples.