Open AccessЭлектролюминесценция слоев Ta-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-, полученных методом молекулярного наслаивания
Author(s) -
A. P. Baraban,
В. А. Дмитриев,
В. Е. Дрозд,
Ю.В. Петров,
В.А. Прокофьев
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.02.48964.282-19
Subject(s) - luminescence , materials science , electroluminescence , layer (electronics) , layering , silicon , excitation , quenching (fluorescence) , deposition (geology) , optoelectronics , fluorescence , optics , nanotechnology , physics , quantum mechanics , paleontology , botany , sediment , biology
. The work shows the possibility of using electroluminescence to study the structures of Si-Ta2O5 and Si-SiO2-Ta2O5 and to obtain the information about the electronic structure of the Ta2O5 layer and the properties of the SiO2-Ta2O5 boundary. A model of the electronic structure of the Ta2O5 layer obtained by molecular layering (atomic layer deposition) is proposed to explain the type of spectral distribution of luminescence regardless of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation of the near-surface region of SiO2 and quenching of the luminescence band in the spectral region of 650 nm.