Open AccessСпектроскопия возбуждения фотолюминесценции массивов квантовых точек InAs/InGaAs/GaAs в температурном диапазоне 20-300 K
Author(s) -
D A Rybalko,
А.М. Надточий,
М. В. Максимов,
A. E. Zhukov
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.01.48846.227-19
Subject(s) - excited state , photoluminescence , ground state , quantum dot , relaxation (psychology) , phonon , spectral line , excitation , photoluminescence excitation , condensed matter physics , atomic physics , materials science , physics , optoelectronics , quantum mechanics , psychology , social psychology
Detailed photoluminescence and photoluminescence excitation (PLE)studying in temperature range 20-300 K with variation of detection energy of selforganized InAs/InGaAs/GaAs quantum dots is presented in this work. PLE spectra analysis allowed us to identify two types of peaks. First type associated with excited-ground state transitions with high probability. Second corresponds to transitions from excited states to the ground state which probability is small, but significantly increased due to the effective relaxation of carriers with LO phonons. We discovered, that the QD distinctive dependence of the energy difference between peaks spectral positions corresponding to the ground and excited states on the ground state energy (i.e., on the quantum dots size) deviates as the temperature rises to 140–160 K, at which charge carrier transport between QD is activated.