Open AccessМагнитоотражение и эффект Керра в пленках La-=SUB=-2/3-=/SUB=-Ba-=SUB=-1/3-=/SUB=-MnO-=SUB=-3-=/SUB=- с вариантной структурой
Author(s) -
А. V. Telegin,
V. A. Bessonova,
Ю.П. Сухоруков,
А. П. Носов,
Е. А. Ганьшина
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2020.01.48836.40-19
Subject(s) - magnetoresistance , condensed matter physics , colossal magnetoresistance , quantum tunnelling , giant magnetoresistance , materials science , reflection (computer programming) , electron , magnetic field , physics , quantum mechanics , computer science , programming language
A correlation was found between the magnetoreflection of natural light and tunneling magnetoresistance in La2 / 3Ba1 / 3MnO3 films with a variant structure grown on ZrO2 (Y2O3) substrates. It was shown that the magnetoreflection as well as the colossal magnetoresistance, is maximum in the region of magnetic ordering near room temperature (Tc ~ 295 K) of the films. The magnetoreflection spectra of a La2 / 3Ba1 / 3MnO3 film with the variant structure are formed by the same mechanisms as in the case of films without the variant structure and can be described in terms of the theory of the magnetorefractive effect. The field and temperature dependences of magnetoreflection demonstrate the presence of an additional low-temperature contribution to the reflection of the La2 / 3Ba1 / 3MnO3 film due to tunneling of spin-polarized electrons through the boundaries of structural domains.