Open AccessОптическое усиление в лазерных гетероструктурах с активной областью на основе короткопериодной сверхрешетки InGaAs/InGaAlAs
Author(s) -
Л.Я. Карачинский,
I. I. Novikov,
A. V. Babichev,
A. G. Gladyshev,
E. S. Kolodeznyi,
S. S. Rochas,
A. S. Kurochkin,
Ю.К. Бобрецова,
A. A. Klimov,
D. V. Denisov,
K. O. Voropaev,
А. С. Ионов,
V. E. Bugrov,
A. I. Egorov
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2019.12.48693.124-19
Subject(s) - superlattice , optoelectronics , quantum well , laser , materials science , diode , gallium arsenide , current density , optics , physics , quantum mechanics
An active region design based on the InGaAs/InGaAlAs superlattice for laser diodes of 1535-1565 nm spectral range was proposed and experimentally realized. It has been shown that the use of active region design based on superlattice allows increasing the modal gain at equal values of the pump current density in comparison with a common used active-region design based on a set of InGaAs quantum wells.