Open AccessОптические свойства нестехиометрического оксида кремния SiO-=SUB=-x-=/SUB=- (x<2)
Author(s) -
В. Н. Кручинин,
Timofey V. Perevalov,
Г. Н. Камаев,
С. В. Рыхлицкий,
В.А. Гриценко
Publication year - 2019
Publication title -
журнал технической физики
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2019.11.48513.136-19
Subject(s) - refractive index , ab initio , ellipsometry , analytical chemistry (journal) , materials science , amorphous solid , stoichiometry , silicon , band gap , ab initio quantum chemistry methods , oxygen , dielectric , dispersion (optics) , spectral line , amorphous silicon , silicon oxide , oxide , plasma enhanced chemical vapor deposition , thin film , chemistry , crystalline silicon , crystallography , optics , optoelectronics , nanotechnology , molecule , physics , silicon nitride , organic chemistry , chromatography , astronomy , metallurgy
The optical properties of amorphous nonstoichiometric silicon oxide (SiO_ x ) films of variable composition ( x = 0 . 62–1 . 92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1 . 12–4 . 96 eV. Spectral ellipsometry showed that the refractive index dispersion character allows one to assign the formed SiO_ x films to silicon-like films, dielectrics, or intermediate-conductivity-type films depending on the content of oxygen in the gas phase during synthesis. A model of the SiO_ x structure for ab initio calculations is proposed and describes well the experimental optical spectra. Ab initio calculations of the dependences of the SiO_ x refractive index and band gap on stoichiometry parameter x are performed.
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