Open AccessТип оптических переходов на краю фундаментального поглощения кристаллов TlGaSe-=SUB=-2-=/SUB=- и TInS-=SUB=-2-=/SUB=-, подвергнутых γ-облучению
Author(s) -
Р.М. Сардарлы,
Ф.Т. Салманов,
Н.А. Алиева
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2019.09.48194.324-18
Subject(s) - irradiation , transmittance , materials science , absorption (acoustics) , radiation , visible spectrum , band gap , analytical chemistry (journal) , optics , atomic physics , chemistry , optoelectronics , physics , nuclear physics , chromatography
The effect of gamma irradiation on the optical properties of layered TlGaSe2 and TlInS2 crystals in the wavelength range of 400–1,100 nm at 300 K is studied. From the analysis of optical absorption spectra, the energies of direct and indirect optical interband transitions before and after gamma irradiation are determined. It is shown that as the gamma-irradiation dose is accumulated in the range of 0–25 Mrad by TlGaSe2 and TlInS2 single crystals, the energies of direct and indirect allowed optical transitions increase from Egd = 2.06 eV and Egi = 1.90 eV at D = 0 Mrad to Egd = 2.11 eV and Egi = 1.98 eV at D = 25 Mrad for TlGaSe2 and Egd = 2.32 eV crystals and Egi = 2.27 eV at D = 0 Mrad to Egd = 2.35 and Egi = 2.32 eV at D = 25 Mrad for TlInS2 crystals. A decrease in the transmittance at doses from 0 to 5 Mrad and a further increase in the transmittance at the radiation dose D = 25 Mrad are observed.