Open AccessСпектральная сенсибилизация фото-ЭДС в монокристаллическом кремнии
Author(s) -
М.А. Горяев
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2019.07.47945.133-19
Subject(s) - semiconductor , monocrystalline silicon , silicon , materials science , organic semiconductor , optoelectronics , absorption (acoustics) , composite material
The effect of an organic dye deposited on the surface of a semiconductor on the photo-EMF spectrum in monocrystalline silicon has been studied. Sensitization of the internal photoeffect has been found in the semiconductor in the absorption band of the dye. An optimal concentration of the dye on the semiconductor surface that corresponds to a dye film thickness of 10–15 nm has been determined. The mechanism of sensitization is discussed on the basis of the theory of nonradiative inductive-resonant energy transfer from the dye to the semiconductor.