Open AccessАнализ внутренних оптических потерь вертикально-излучающего лазера спектрального диапазона 1.55 μm, сформированного методом спекания пластин
Author(s) -
S. A. Blokhin,
M. A. Bobrov,
A. A. Blokhin,
A. G. Kuzmenkov,
N. A. Maleev,
V. M. Ustinov,
E. S. Kolodeznyi,
S. S. Rochas,
A. V. Babichev,
I. I. Novikov,
A. G. Gladyshev,
Л.Я. Карачинский,
Д. В. Денисов,
K. O. Voropaev,
А. С. Ионов,
A. I. Egorov
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2019.07.47941.296-18
Subject(s) - materials science , laser , optoelectronics , current (fluid) , absorption (acoustics) , valence band , quantum well , quantum efficiency , atmospheric temperature range , charge carrier , thermal , optics , physics , band gap , meteorology , composite material , thermodynamics
The results of a study of internal optical losses and current injection efficiency in vertical-emitting lasers of a spectral range of 1.55 µm obtained by sintering plates of high-q Bragg reflectors and the active region on the basis of thin strained InGaAs/InAlGaAs quantum wells have been presented. It has been shown that the proposed design of the laser provides a record low level of internal optical losses (less than 6.5 cm^–1) and high efficiency of current injection (more than 90%) at room temperature, which allows the realization of submilliampere threshold currents. As the temperature rises to 85°C, the current injection efficiency drops to 70% due to the thermal emission of charge carriers from the active region, accompanied by an increase in internal optical losses to 9.1 cm^–1 because of an increase in absorption on free carriers and/or intersubband absorption in the valence band.