Open AccessПоверхностные поляритоны в пленках нитридов алюминия и галлия, легированных кремнием
Author(s) -
Н.Н. Новикова,
В.А. Яковлев,
С.А. Климин,
Т.В. Малин,
А.М. Гилинский,
К.С. Журавлев
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2019.07.47929.84-19
Subject(s) - gallium nitride , materials science , nitride , attenuated total reflection , aluminium , reflection (computer programming) , sapphire , silicon on sapphire , optoelectronics , gallium , doping , phonon , layer (electronics) , silicon , optics , nanotechnology , composite material , condensed matter physics , metallurgy , computer science , laser , physics , silicon on insulator , infrared , programming language
The reflection and attenuated total reflection spectra of aluminum and gallium nitride films doped with silicon on sapphire substrates with a buffer layer of aluminum nitride have been measured. In the spectra of attenuated total reflection, surface phonon and plasmon–phonon polaritons were observed. A high concentration of charge carriers in the gallium nitride film and their practical absence in the aluminum nitride film were experimentally observed.