Open AccessОптические и фотоэлектрические свойства тонких пленок GaS и гетероструктуры GaS/InSe
Author(s) -
А.Г. Гусейнов,
В.М. Салманов,
Р.М. Мамедов,
А.А. Салманова,
Ф.М. Ахмедова
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/os.2019.05.47649.205-18
Subject(s) - photoelectric effect , heterojunction , scanning electron microscope , band gap , materials science , thin film , spectroscopy , analytical chemistry (journal) , absorption spectroscopy , diffraction , luminescence , absorption (acoustics) , optoelectronics , chemistry , optics , nanotechnology , physics , chromatography , quantum mechanics , composite material
AbstractGaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), energy-dispersive X-ray (EDX) spectroscopy, and scanning electron microscopy (SEM). The GaS band gap has been determined from the absorption spectrum. p -GaS/ n -InSe heterojunctions have been formed on the basis of GaS crystals and InSe thin films. Current–voltage, optical, photoelectric, and luminescence characteristics of p -GaS/ n -InSe heterojunctions have been experimentally investigated.