Open AccessМорфология поверхности полуполярных GaN-слоев при эпитаксии на наноструктурированной подложке Si
Author(s) -
В.Н. Бессолов,
Е.В. Коненкова,
Т.А. Орлова,
С.Н. Родин,
А.В. Соломникова
Publication year - 2022
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2022.05.52376.12-22
Subject(s) - nucleation , materials science , gallium nitride , layer (electronics) , morphology (biology) , substrate (aquarium) , crystal (programming language) , nanowire , nitride , optoelectronics , gallium , nanotechnology , metallurgy , chemistry , oceanography , organic chemistry , biology , geology , computer science , genetics , programming language
It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-structured Si(100) or Si(113) substrates with a V-shaped or U–shaped surface profile, respectively.The morphology of the surface of the semipolar layers indicates that the different height-to-width ratio of the GaN(11-22) and GaN(10-11) blocks is associated with a higher growth rate of the GAN(11-22) face than GaN(10-11) and with different growth rates of the semipolar and polar crystal faces during the nucleation of the layer on a nano-structured substrate.