Open AccessДеградация ультрафиолетовых светодиодов с квантовыми ямами InGaN/GaN, вызванная кратковременными воздействиями током
Author(s) -
А.М. Иванов,
А.В. Клочков
Publication year - 2022
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2022.02.52019.229-21
Subject(s) - light emitting diode , optoelectronics , materials science , quantum well , degradation (telecommunications) , ultraviolet , gallium nitride , quantum , wide bandgap semiconductor , indium gallium nitride , optics , physics , nanotechnology , computer science , telecommunications , laser , layer (electronics) , quantum mechanics
A comparative analysis of the initial stages of degradation of ultraviolet and blue LED structures with InGaN / GaN quantum wells is carried out. In the mode of accelerated aging, the structures were subjected to short-term, sequential exposure to currents of 80–190 mA at forward bias. The exposure time did not exceed three hours. There was an increase (up to 20%) in the external quantum efficiency. The most probable physical mechanisms explaining the changes in InGaN / GaN LEDs are presented and possible ways to slow down the aging of UV LEDs are outlined.