Open AccessРентгеновский детектор на основе CdZnTe в режиме поперечной и продольной фотопроводимости
Author(s) -
Ю.М. Дикаев,
А.А. Кудряшов
Publication year - 2022
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2022.01.51865.46-21
Subject(s) - photoconductivity , photocurrent , detector , radiation , absorption (acoustics) , particle detector , optics , physics , attenuation coefficient , semiconductor , materials science , range (aeronautics) , transverse plane , optoelectronics , structural engineering , composite material , engineering
The work considers "transverse" and "longitudinal" photoconductivity modes, regarding the direction of radiation, photoconductivity in semiconductor detectors of CdZnTe. Mathematical calculations were made from the representation of the internal area of the detector in the form of radiation absorption sites. The results of the calculations are compared with experimentally measured photocurrent of the detector with a cross section of 2x2 mm CdZnTe from the direction of its radiation by X-ray. From the ratio of photocurrents in the range of X-ray radiation energies 35-72 keV for these two cases, a linear coefficient of X-ray absorption by the CdZnTe detector is determined.